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1 19mhz rad hard 40v quad rail-to-rail input-output, low-power operational amplifiers isl70444seh the isl70444seh features four low-power amplifiers optimized to provide maximum dynamic range. these op amps feature a unique combinatio n of rail to rail operation on the input and output as well as a slew enhanced front end that provides ultra fast slew rates positively proportional to a given step size; thereby increasing accuracy under transient conditions, whether it?s periodic or momentary. they also offer low power, low offset voltage, and low temperature drift, making it ideal for applications requiring both high dc accuracy and ac performance. with <5s recovery for single event transients (set) (let th = 86.4mev?cm 2 /mg), the number of filtering components needed is drastically reduced. the isl70444seh is also immune to single event latch-up as it is fabricated in intersil?s proprietary pr40 silicon on insulator (soi) process. they are designed to operate over a single supply range of 2.7v to 40v or a split supply voltage range of 1.35v to 20v. applications for these amplifiers include precision instrumentation, data acquis ition, precision power supply controls, and process controls. the isl70444seh is available in a 14 ld hermetic ceramic flatpack and die forms that operate over the temperature range of -55c to +125c. related literature ? isl70444seh evaluation board user?s guide an1824 ? isl70444seh single event effects report an1838 ? isl70444seh smd 5962-13214 ? isl70444seh radiation test report features ? electrically screened to dla smd# 5962-13214 ? acceptance tested to 50krad(si) (ldr) wafer-by-wafer ? <5s recovery from see (let th = 86.4mev?cm 2 /mg) ? unity gain stable ? rail-to-rail input and output ? wide gainbandwidth product . . . . . . . . . . . . . . . . . . . . 19mhz ? wide single and dual supply range. . . . . . . . 2.7v to 40v max ? low input offset voltage . . . . . . . . . . . . . . . . . . . . . . . . . 300v ? low current consumption (per amplifier) . . . . . . . 1.1ma, typ ? no phase reversal with input overdrive ?slew rate - large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60v/s ? operating temperature range. . . . . . . . . . . .-55c to +125c ? radiation tolerance - high dose rate (50-300rad(si)/s). . . . . . . . . . . 300krad(si) - low dose rate (0.01rad(si)/s) . . . . . . . . . . . . 100krad(si)* - sel/seb let th . . . . . . . . . . . . . . . . . . . . 86.4mev?cm 2 /mg * product capability established by initial characterization. applications ? precision instruments ? active filter blocks ? data acquisition ?power supply control ? process control figure 1. typical application: single-supply, high-side current sense amplifier figure 2. v os shift vs high dose rate radiation -in +in r f r ref + isl70444 +2.7v v- v+ r in - 10k ? r in + 10k ? - + 100k ? v ref 100k ? v out load r sense to 40v v out = 10 (i load * r sense ) + -30 -20 -10 0 10 20 30 0 50 100 150 200 250 300 krad (si) v os (v) vs = 18v grounded biased june 14, 2013 fn8411.1 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 1-888-468-3774 | copyright intersil americas llc 2013. all rights reserved intersil (and design) is a trademark owned by intersil corporation or one of its subsidiaries. all other trademarks mentioned are the property of their respective owners.
isl70444seh 2 fn8411.1 june 14, 2013 pin configuration isl70444seh (14 ld flatpack) top view -+ - + -+ - + bc ad out a -in a +in a v + 1 2 3 4 5 6 7 10 9 8 11 12 13 14 +in b -in b out b v - +in c -in c out c out d -in d +in d pin descriptions pin number pin name equivalent esd circuit description 1out a circuit 2 amplifier a output 2-in a circuit 1 amplifier a inverting input 3+in a circuit 1 amplifier a non-inverting input 4v + circuit 3 positive power supply 5+in b circuit 1 amplifier b non-inverting input 6-in b circuit 1 amplifier b inverting input 7out b circuit 2 amplifier b output 8out c circuit 2 amplifier c output 9-in c circuit 1 amplifier c inverting input 10 +in c circuit 1 amplifier c non-inverting input 11 v- circuit 3 negative power supply 12 +in d circuit 1 amplifier d non-inverting input 13 -in d circuit 1 amplifier d inverting input 14 out d circuit 2 amplifier d output - e-pad none e-pad under package (unbiased, tied to package lid) v + v - out circuit 2 circuit 1 v + v - circuit 3 capacitively triggered esd clamp in- v + v - in+ 600 ? 600 ?
isl70444seh 3 fn8411.1 june 14, 2013 ordering information ordering/smd number part number temp range (c) package (rohs compliant) pkg. dwg. # 5962f1321401vxc isl70444sehvf -55 to +125 14 ld flatpack k14.c isl70444sehf/proto isl70444sehf/proto -55 to +125 14 ld flatpack k14.c 5962F1321401V9A isl70444sehvx -55 to +125 die isl70444sehx/sample isl70444sehx/sample -55 to +125 die isl70444seheval1z isl70444seheval1z evaluation board notes: 1. these intersil pb-free hermetic packaged products employ 100% au plate - e4 termination finish, which is rohs compliant and c ompatible with both snpb and pb-free soldering operations. 2. for moisture sensitivity level (msl), please see device information page for isl70444seh . for more information on msl please see tech brief tb363 . 3. specifications for rad hard qml devices are controlled by the defense logistics agency land and maritime (dla). the smd numbe rs listed in the ?ordering information? table must be used when ordering.
isl70444seh 4 fn8411.1 june 14, 2013 absolute maximum ratings thermal information maximum supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42v maximum supply voltage (note 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42v maximum differential input current . . . . . . . . . . . . . . . . . . . . . . . . . . 20ma maximum differential input voltage . . . . . . . . 42v or v - - 0.5v to v + + 0.5v min/max input voltage . . . . . . . . . . . . . . . . . . . . 42v or v - - 0.5v to v + + 0.5v max/min input current for input voltage >v + or isl70444seh 5 fn8411.1 june 14, 2013 i src output short circuit current sourcing; v in = 0v, v out = -18v 10 --ma i snk output short circuit current sinking; v in = 0v, v out = +18v 10 --ma i s supply current/amplifier unity gain - 1.5 1.75 ma -1.95 2.4 ma ac specifications gbw gain bandwidth product a cl = 101, r l = 10k - 19 - mhz e n voltage noise density f = 10khz - 11.3 - nv/ hz i n current noise density f = 10khz - 0.312 - pa/ hz sr large signal slew rate a v = 1, r l = 10k , v o = 10v p-p 60 - - v/s electrical specifications v s = 18v, v cm = v o = 0v, r l = open, t a = +25c, unless otherwise noted. boldface limits apply over the operating temperature range, -55c to +125c. (continued) parameter description conditions min (note 7) typ max (note 7) unit electrical specifications v s = 2.5v, v cm = v o = 0v, r l = open, t a = +25c, unless otherwise noted. boldface limits apply over the operating temperature range, -55c to +125c. parameter description conditions min (note 7) typ max (note 7) unit v os offset voltage v cm = 0v - 20 300 v v cm = v + to v - - 80 400 v tcv os offset voltage temperature coefficient v cm = v + - 2v to v - + 2v - 0.5 - v/ c v os input offset channel-to-channel match v cm = v + -79 800 v v cm = v - -119 800 v i b input bias current v cm = 0v - 202 340 na v cm = v + -182 340 na v cm = v - - 229 580 na v cm = v + - 0.5v - 181 340 na v cm = v - + 0.5v - 224 580 na i os input offset current v cm = v + to v - -17 0 17 na v cmir common mode input voltage range v - - v + v cmrr common-mode rejection ratio v cm = v - to v + -92- db v cm = v - to v + 70 -- db v cm = v + - 0.5v to v - + 0.5v - 91 - db v cm = v + - 0.5v to v - + 0.5v 74 -- db psrr power supply rejection ratio v - = -2.5v; v + = 0.5v to 2.5v; v + = 2.5v; v - = -0.5v to -2.5v - 123 - db 80 -- db a vol open-loop gain r l = 10k to ground - 118 - db 90 -- db v oh output voltage high (v out to v + )r l = no load - 53 85 mv r l = 10k ? -53 105 mv r l = 600 ? -- 400 mv
isl70444seh 6 fn8411.1 june 14, 2013 v ol output voltage low (v out to v - )r l = no load - 53 85 mv r l = 10k ? -53 105 mv r l = 600 ? -- 400 mv i s supply current/amplifier unity gain - 1.1 1.25 ma -1.6 1.8 ma ac specifications gbw gain bandwidth product a cl = 101, r l = 10k - 17 - mhz e n voltage noise density f = 10khz - 12.3 - nv/ hz i n current noise density f = 10khz - 0.313 - pa/ hz sr large signal slew rate a v = 1, r l = 10k , v o = 3v p-p -35- v/s electrical specifications v s = 2.5v, v cm = v o = 0v, r l = open, t a = +25c, unless otherwise noted. boldface limits apply over the operating temperature range, -55c to +125c. (continued) parameter description conditions min (note 7) typ max (note 7) unit electrical specifications v s = 1.5v, v cm = v o = 0v, r l = open, t a = +25c, unless otherwise noted. boldface limits apply over the operating temperature range, -55c to +125c. parameter description conditions min (note 7) typ max (note 7) unit v os offset voltage v cm = 0v - 51 300 v v cm = v + to v - - 80 400 v v os input offset channel-to-channel match v cm = v + -79 800 v v cm = v - 119 800 v i b input bias current v cm = 0v - 220 330 na v cm = v + -180 330 na v cm = v - - 225 565 na v cm = v + - 0.5v - 180 330 na v cm = v - + 0.5v - 223 565 na i os input offset current v cm = v + to v - -17 0 17 na v cmir common mode input voltage range v - - v + v v oh output voltage high (v out to v + )r l = no load - 26 39 mv r l = 10k ? -30 60 mv v ol output voltage low (v out to v - )r l = no load - 26 39 mv r l = 10k ? -42 60 mv i s supply current/amplifier unity gain - 1.1 1.24 ma -1.57 1.8 ma ac specifications gbw gain bandwidth product a cl = 101, r l = 10k - 16 - mhz e n voltage noise density f = 10khz - 12 - nv/ hz i n current noise density f = 10khz - 0.312 - pa/ hz
isl70444seh 7 fn8411.1 june 14, 2013 electrical specifications v s = 18v, v cm = v o = 0v, r l = open, t a = +25c, unless otherwise noted. boldface limits apply over a total ionizing dose of 300krad(si) with exposure of a high dose rate of 50 to 300rad(si)/s and over a total ionizing dose of 50 krad(si) with exposure at a low dose rate of <10mrad(si)/s. parameter description conditions min (note 7) typ max (note 7) unit v os offset voltage v cm = v + to v - - - 400 v v os input offset channel-to-channel match v cm = v + -- 800 v v cm = v - -- 800 v i b input bias current v cm = v + -- 650 na v cm = v - -650 -- na i os input offset current v cm = v + to v - -17 - 17 na v cmir common mode input voltage range v - - v + v cmrr common-mode rejection ratio v cm = v - to v + --- db v cm = v - to v + 70 - - db v cm = v + - 0.5v to v - + 0.5v - - - db v cm = v + - 0.5v to v - + 0.5v 80 - - db psrr power supply rejection ratio v - = -18v; v + = 0.5v to 18v; v + = 18v; v - = -0.5v to -18v --- db 88 - - db a vol open-loop gain r l = 10k ? to ground --- db 96 - - db v oh output voltage high (v out to v + )r l = no load - - 160 mv r l = 10k ? - - 175 mv v ol output voltage low (v out to v - )r l = no load - - 150 mv r l = 10k ? - - 165 mv i src output short circuit current sourcing; v in = 0v, v out = -18v 10 --ma i snk output short circuit current sinking; v in = 0v, v out = +18v 10 --ma i s supply current/amplifier unity gain - - 2.4 ma sr large signal slew rate av = 1, rl = 10k , v o = 10v p-p 60 v/s electrical specifications v s = 2.5v, v cm = v o = 0v, r l = open, t a = +25c, unless otherwise noted. boldface limits apply a total ionizing dose of 300krad(si) with exposure of a high dose rate of 50 to 300rad(si)/s and over a total ionizing dose of 50krad(s i) with exposure at a low dose rate of <10mrad(si)/s. parameter description conditions min (note 7) typ max (note 7) unit v os offset voltage v cm = v + to v - - - 400 v v os input offset channel-to-channel match v cm = v + -- 800 v v cm = v - -- 800 v i b input bias current v cm = v + -- 650 na v cm = v - -650 -- na i os input offset current v cm = v + to v - -17 - 17 na v cmir common mode input voltage range v - - v + v cmrr common-mode rejection ratio v cm = v - to v + --- db v cm = v - to v + 70 - - db v cm = v + - 0.5v to v - + 0.5v - - - db v cm = v + - 0.5v to v - + 0.5v 74 - - db
isl70444seh 8 fn8411.1 june 14, 2013 psrr power supply rejection ratio v - = -2.5v; v + = 0.5v to 2.5v; v + = 2.5v; v - = -0.5v to -2.5v --- db 80 - - db a vol open-loop gain r l = 10k ? to ground --- db 90 - - db v oh output voltage high (v out to v + )r l = no load - - 85 mv r l = 10k ? - - 105 mv r l = 600 ? - - 400 mv v ol output voltage low (v out to v - )r l = no load - - 85 mv r l = 10k ? - - 105 mv r l = 600 ? - - 400 mv i s supply current/amplifier unity gain - - 1.8 ma electrical specifications v s = 1.5v, v cm = v o = 0v, r l = open, t a = +25c, unless otherwise noted. boldface limits apply a total ionizing dose of 300krad(si) with exposure of a high dose rate of 50-300rad(si)/s and over a total ionizing dose of 50krad(si) with exposure at a low dose rate of <10mrad(si)/s. parameter description conditions min (note 7) typ max (note 7) unit v os offset voltage v cm = v + to v - - - 400 v v os input offset channel-to-channel match v cm = v + -- 800 v v cm = v - -- 800 v i b input bias current v cm = v + -- 650 na v cm = v - -650 -- na i os input offset current v cm = v + to v - -17 - 17 na v cmir common mode input voltage range v - - v + v v oh output voltage high (v out to v + )r l = no load - - 160 mv r l = 10k ? - - 175 mv v ol output voltage low (v out to v - )r l = no load - - 150 mv r l = 10k ? - - 165 mv i s supply current/amplifier unity gain - - 1.8 ma note: 7. compliance to datasheet limits is assu red by one or more methods: production test, characterization and/or design. electrical specifications v s = 2.5v, v cm = v o = 0v, r l = open, t a = +25c, unless otherwise noted. boldface limits apply a total ionizing dose of 300krad(si) with exposure of a high dose rate of 50 to 300rad(si)/s and over a total ionizing dose of 50krad(s i) with exposure at a low dose rate of <10mrad(si)/s. (continued) parameter description conditions min (note 7) typ max (note 7) unit
isl70444seh 9 fn8411.1 june 14, 2013 typical performance curves unless otherwise specified, v s 18v, v cm = 0, v o = 0v, t a = +25c. figure 3. offset voltage vs common mode voltage figure 4. ibias vs common mode voltage figure 5. ibias vs temperature (v s = 18v) figure 6. ibias vs temperature (v s = 2.5v) figure 7. ibias vs temperature, (v s = 1.5v ) figure 8. ios vs temperature (v s = 18v) -60 -40 -20 0 20 40 60 80 100 120 -20 -15 -10 -5 0 5 10 15 20 common mode voltage (v) offset voltage (v) -300 -200 -100 0 100 200 300 -20 -15 -10 -5 0 5 10 15 20 common mode voltage (v) ibias (na) 0 50 100 150 200 250 300 -100 -50 0 50 100 150 temperature (c) ib+ ib- current (na) 0 50 100 150 200 250 -100 -50 0 50 100 150 temperature (c) ib+ ib- current (na) 0 50 100 150 200 250 300 -100 -50 0 50 100 150 temperature (c) current (na) ib+ ib- 0 0.5 1.0 1.5 2.0 2.5 -100 -50 0 50 100 150 temperature (c) current (na) ios
isl70444seh 10 fn8411.1 june 14, 2013 figure 9. ios vs temperature (v s = 2.5v) figure 10. ios vs temperature (v s = 1.5v) figure 11. vos vs temperature (v s = 18v) figure 12. vos vs temperature (v s = 2.5v) figure 13. vos vs temperature (v s = 1.5v) figure 14. avol vs temper ature vs supply voltage typical performance curves unless otherwise specified, v s 18v, v cm = 0, v o = 0v, t a = +25c. (continued) 0 0.5 1.0 1.5 2.0 2.5 -100 -50 0 50 100 150 temperature (c) ios current (na) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -100 -50 0 50 100 150 temperature (c) ios current (na) 0 10 20 30 40 50 60 70 -100 -50 0 50 100 150 temperature (c) voltage (v) vos 0 10 20 30 40 50 60 70 -100 -50 0 50 100 150 temperature (c) voltage (v) vos 0 10 20 30 40 50 -100 -50 0 50 100 150 temperature (c) vos voltage (v) 100 105 110 115 120 125 130 135 -75 -25 25 75 125 temperature (c) 1.5v gain (db) 18v 2.5v
isl70444seh 11 fn8411.1 june 14, 2013 figure 15. negative supply current vs supply voltage figure 16. positive supply current vs supply voltage figure 17. psrr+ vs temperature vs supply voltage figure 18. psrr- vs temperature vs supply voltage figure 19. cmrr vs temperature vs supply voltage figure 20. short circuit current vs temperature typical performance curves unless otherwise specified, v s 18v, v cm = 0, v o = 0v, t a = +25c. (continued) -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 10 20 30 40 supply differential (v + to v - ) (v) current (ma) +125c -55c +25c 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 supply differential (v + to v - ) (v) current (ma) -55c +125c +25c 100 105 110 115 120 125 130 135 -75 -25 25 75 125 temperature (c) 18v 2.5v 1.5v gain (db) 100 105 110 115 120 125 130 135 -75 -25 25 75 125 temperature (c) gain (db) 18v 2.5v 1.5v 40 50 60 70 80 90 100 110 120 -75 -25 25 75 125 temperature (c) gain (db) 18v 2.5v 1.5v 0 10 20 30 40 50 60 70 -75 -25 25 75 125 temperature (c) current (ma) 5v 15v 18v 2.5v 1.5v
isl70444seh 12 fn8411.1 june 14, 2013 figure 21. (v s = 1.5v) voh vs temperature figure 22. (v s = 2.5v) voh vs temperature figure 23. (v s = 18v) voh vs temperature figure 24. (v s = 1.5v) vol vs temperature figure 25. (v s = 2.5v) vol vs temperature figure 26. (v s = 18v) vol vs temperature typical performance curves unless otherwise specified, v s 18v, v cm = 0, v o = 0v, t a = +25c. (continued) 0 10 20 30 40 50 -75 -25 25 75 125 175 temperature (c) (v s+ - v out ) (mv) r l = 2k ? r l = open r l = 10k ? 0 10 20 30 40 50 60 70 -75 -25 25 75 125 175 (v s+ - v out ) (mv) temperature (c) r l = 2k ? r l = open r l = 10k ? 0 50 100 150 200 250 300 350 -75 -25 25 75 125 175 temperature (c) (v s+ - v out ) (mv) r l = 2k ? r l = open r l = 10k ? 0 10 20 30 40 50 temperature (c) (v s- + v out ) (mv) r l = 2k ? r l = open r l = 10k ? -75 -25 25 75 125 175 0 10 20 30 40 50 60 70 -75 -25 25 75 125 175 temperature (c) (v s- + v out ) (mv) r l = 2k ? r l = open r l = 10k ? 0 50 100 150 200 250 300 350 -75 -25 25 75 125 175 temperature (c) (v s- - v out ) (mv) r l = 2k ? r l = open r l = 10k ?
isl70444seh 13 fn8411.1 june 14, 2013 figure 27. input noise vo ltage spectral density (v s = 18v) figure 28. input nois e current spectral density (v s = 18v) figure 29. open loop frequency response (c l = 0.01pf) figure 30. open loop frequency response (c l = 10pf) figure 31. open loop frequency response (c l = 22pf) figure 32. open loop frequency response (c l = 47pf) typical performance curves unless otherwise specified, v s 18v, v cm = 0, v o = 0v, t a = +25c. (continued) 1 10 100 1,000 10,000 0.01 0.1 1 10 100 1k 10k 100k frequency (hz) input noise voltage (nv/ hz) 0.1 1 10 0.1 1 10 100 1k 10k 100k frequency (hz) input noise current (pa/ hz) -250 -200 -150 -100 -50 0 50 100 150 200 -150 -100 -50 0 50 100 150 0 10 1k 100k 10m 1g frequency (hz) simulation gain (db) phase () gain phase -300 -250 -200 -150 -100 -50 0 50 100 150 200 250 -150 -100 -50 0 50 100 150 0 10 1k 100k 10m 1g frequency (hz) simulation gain (db) gain phase phase () -300 -250 -200 -150 -100 -50 0 50 100 150 200 250 -150 -100 -50 0 50 100 150 0 10 1k 100k 10m 1g frequency (hz) simulation gain (db) phase () gain phase -300 -250 -200 -150 -100 -50 0 50 100 150 200 250 -150 -100 -50 0 50 100 150 0 10 1k 100k 10m 1g simulation gain (db) phase () gain phase frequency (hz)
isl70444seh 14 fn8411.1 june 14, 2013 figure 33. open loop frequency response (c l = 100pf) figure 34. cmrr vs frequency figure 35. psrr vs frequency figure 36. frequency response vs closed loop gain figure 37. frequency response vs feedback resistance (r f ) figure 38. frequency response vs load resistance typical performance curves unless otherwise specified, v s 18v, v cm = 0, v o = 0v, t a = +25c. (continued) -300 -250 -200 -150 -100 -50 0 50 100 150 200 250 -150 -100 -50 0 50 100 150 0 10 1k 100k 10m 1g frequency (hz) simulation gain (db) phase () gain phase -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 100 1k 10k 100k 1m 10m 100m frequency (hz) gain (db) 1.5v 18v 2.5v -10 0 10 20 30 40 50 60 70 80 90 100 110 120 100 1k 10k 100k 1m 10m 100m frequency (hz) gain (db) 1.5v 18v 2.5v -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 100 1k 10k 100k 1m 10m 100m frequency (hz) gain (db) g = 10 g = 1000 g = 100 g = 1 -70 -60 -50 -40 -30 -20 -10 0 10 20 100 1k 10k 100k 1m 10m 100m frequency (hz) gain (db) r f = 10k ? r f = 100 ? r f = 1k ? -30 -20 -10 0 10 100 1k 10k 100k 1m 10m 100m frequency (hz) r l = 5k ? r l = 1k ? r l = 10k ? r l = 2k ? gain (db)
isl70444seh 15 fn8411.1 june 14, 2013 figure 39. unity gain response vs load capacitance figure 40. frequency response vs supply voltage figure 41. crosstalk rejection figure 42. slew rate vs st ep size vs temperature (v s = 1.5v) figure 43. slew rate vs step size vs temperature (v s = 2.5v) figure 44. slew rate vs st ep size vs temperature (v s = 18v) typical performance curves unless otherwise specified, v s 18v, v cm = 0, v o = 0v, t a = +25c. (continued) -50 -40 -30 -20 -10 0 10 100 1k 10k 100k 1m 10m 100m frequency (hz) acl = 1 rl = 10k v s = 18v gain (db) 12pf 27pf 47pf 68pf -40 -30 -20 -10 0 10 100 1k 10k 100k 1m 10m 100m frequency (hz) gain (db) 1.5v 18v 2.5v 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 100 1k 10k 100k 1m 10m 100m frequency (hz) gain (db) 1.5v 18v 2.5v 0 5 10 15 20 25 30 35 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 step size (v) slew rate (v/s) -55c +25c +125c 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 step size (v) slew rate (v/s) -55c +25c +125c 0 50 100 150 200 250 300 350 400 450 0 5 10 15 20 25 step size (v) slew rate (v/s) -55c +25c +125c
isl70444seh 16 fn8411.1 june 14, 2013 figure 45. saturation recovery (v s = 18v) figure 46. saturation recovery (v s = 5v) figure 47. saturation recovery (v s = 2.5v) figure 48. overshoot (%) vs load capacitance figure 49. input overdrive response typical performance curves unless otherwise specified, v s 18v, v cm = 0, v o = 0v, t a = +25c. (continued) 1s/div 200mv/div v s = 18v a v = -100 r l = 2k ? r f = 100k , rg = 1k ? v in = 400mv p-p (input) (output) 1s/div 200mv/div v s = 5v a v = -100 r l = 1k ? r f = 100k ? , rg = 1k ? v in = 400mv p-p (input) (output) 1s/div 200mv/div a v = -100 r l = 2k ? r f = 100k , rg = 1k ? v in = 400mv p-p (input) (output) v s = 2.5v 0 5 10 15 20 25 30 35 40 1 10 100 capacitance (pf) overshoot (%) os+ os- v s = 18v r l = 10k ? a v = 1 v out = 25mv p-p 10s/div 2v/div, input v s = 5v 2v/div, output v in = 12v p-p no output phase reversal
isl70444seh 17 fn8411.1 june 14, 2013 post high dose rate radiation characteristics unless otherwise specified, v s 18v, v cm =0, v o = 0v, t a = +25c. this data is typical mean test data post radiation expo sure at a high dose rate of 50 to 300rad(si)/s. this data is intended to show typical parameter shifts due to high dose rate radiation. these are not limits nor are they guaranteed. figure 50. v os shift vs high dose rate radiation figure 51. i bias shift vs high dose rate radiation figure 52. i - shift vs high dose rate radiation figure 53. i + shift vs high dose rate radiation figure 54. i os shift vs high dose rate radiation -30 -20 -10 0 10 20 30 0 50 100 150 200 250 300 krad (si) v os (v) vs = 18v grounded biased -30 -20 -10 0 10 20 30 0 50 100 150 200 250 300 krad (si) current (na) vs = 18v grounded biased -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 0 50 100 150 200 250 300 krad (si) current (ma) vs = 18v grounded biased -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 0 50 100 150 200 250 300 krad (si) current (ma) vs = 18v grounded biased -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 0 50 100 150 200 250 300 krad(si) current (na) vs = 18v grounded biased
isl70444seh 18 fn8411.1 june 14, 2013 post low dose rate radiation characteristics unless otherwise specified, v s 18v, v cm =0, v o = 0v, t a = +25c. this data is typical mean test data post radiation exposu re at a low dose rate of <10mrad(si)/s. this data is intende d to show typical parameter shifts due to high dose rate radiation. these are not limi ts nor are they guaranteed. figure 55. v os shift vs low dose rate radiation figure 56. i bias shift vs low dose rate radiation figure 57. i os shift vs low dose rate radiation figure 58. i + shift vs low dose rate radiation figure 59. i - shift vs low dose rate radiation -30 -20 -10 0 10 20 30 0 10 20 30 40 50 60 70 80 90 100 krad (si) vs = 18v v os (v) biased grounded -30 -20 -10 0 10 20 30 0 10 20 30 40 50 60 70 80 90 100 krad (si) current (na) vs = 18v biased grounded -6 -4 -2 0 2 4 6 0 10 20 30 40 50 60 70 80 90 100 krad (si) current (na) vs = 18v biased grounded -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 0 10 20 30 40 50 60 70 80 90 100 krad (si) current (ma) vs = 18v biased grounded -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 0 10 20 30 40 50 60 70 80 90 100 krad (si) current (ma) vs = 18v biased grounded
isl70444seh 19 fn8411.1 june 14, 2013 applications information functional description the isl70444seh contains four high speed and low power op amps designed to take advantage of its full dynamic input and output voltage range with rail to rail operation. by offering low power, low offset voltage, and low temperature drift coupled with its high bandwidth and enhanced slew rates upwards of 50v/s, these op amps are ideal for applications requiring both high dc accuracy and ac performance. the isl70444seh is manufactured in intersil?s pr40 silicon-on-insulator process, which makes this device immune to single event latch-up and provides excellent radiation tolerance. this makes it the ideal choice for high reliability applic ations in harsh radiation-prone environments. operating voltage range the devices are designed to operate with a split supply rail from 1.35v to 20v or a single supply rail from 2.7v to 40v. the isl70444seh is fully characterized in production for supply rails of 5v (2.5v) and 36v (18v). the power supply rejection ratio is typically 120db over the full operating voltage range. the worst case common mode rejection ratio over temperature is within 1.5v to 2v of each rail. when v cm is inside that range, the cmrr performance is typically >110d b with 18v supplies. the minimum cmrr performance over the -55c to +125c temperature range and radiation is >70db over the full common mode input range for power supply voltages from 2.5v (5v) to 18v (36v). input performance the slew enhanced front end is a block that is placed in parallel with the main input stage and functions based on the input differential. input esd diode protection the input terminals (in+ and in-) have internal esd protection diodes to the positive and negative supply rails, series connected 600 current limiting resistors and an anti-parallel diode pair across the inputs. output short circuit current limiting the output current limit has a worst case minimum limit of 8ma but may reach as high as 100ma. the op amp can withstand a short circuit to either rail for a short duration (<1 second) as long as the maximum operating junction temperature is not violated. this applies to on ly one amplifier at a given time. continued use of the device in these conditions may degrade the long term reliability of the part and is not recommended. figure 20 shows the typical short circuit currents that can be expected. the isl70444seh?s current limiting circuitry will automatically lower the current limit of the device if short circuit conditions carry on for extended periods in time in an effort to protect itself from malfunction, however extended operation in this mode will degrade the output rail-to-rail performance by increasing the v oh /v ol levels. output phase reversal output phase reversal is a change of polarity in the amplifier transfer function when the input voltage exceeds the supply voltage. the isl70444seh is immune to output phase reversal, even when the input voltage is 1v beyond the supplies. this is illustrated in figure 49. power dissipation it is possible to exceed the +150c maximum junction temperatures under certain load and power supply conditions. it is therefore important to ca lculate the maximum junction temperature (t jmax ) for all applications to determine if power supply voltages, load conditions, or package type need to be modified to remain in the safe operating area. these parameters are related using equation 1: where: ?p dmaxtotal is the sum of the maximum power dissipation of each amplifier in the package (pd max ) ?pd max for each amplifier can be calculated using equation 2: where: ?t max = maximum ambient temperature ? ja = thermal resistance of the package ?pd max = maximum power dissipation of 1 amplifier ?v s = total supply voltage ?i qmax = maximum quiescent supply current of 1 amplifier ?v outmax = maximum output voltage swing of the application figure 60. input esd diode current limiti ng, unity gain - + r l v in v out v+ v- 600 600 t jmax t max ja xpd maxtotal + = (eq. 1) pd max v s i qmax v s ( - v outmax ) v outmax r l ---------------------------- + = (eq. 2)
isl70444seh 20 fn8411.1 june 14, 2013 unused channel configuration the isl70444seh is a quad op amp. if the application does not require the use of all four op amps, the user must configure the unused channels to prevent it from oscillating. any unused channels will oscillate if the input and output pins are floating. this results in higher-than-expe cted supply currents and possible noise injection into any active channels being used. the proper way to prevent oscillation is to short the output to the inverting input, and ground the positive input (figure 61). figure 61. preventing oscillations in unused channels - +
isl70444seh 21 fn8411.1 june 14, 2013 die characteristics die dimensions 2410m x 3175m (80mils x 101mils) thickness: 483m 25m (19mils 1 mil) interface materials glassivation type: nitrox thickness: 15k? top metallization type: alcu (99.5%/0.5%) thickness: 30k? backside finish silicon process pr40 assembly related information substrate potential floating additional information worst case current density < 2 x 10 5 a/cm 2 transistor count 730 weight of packaged device 0. 5952 grams (typical) lid characteristics finish: gold potential: unbiased, tied to e-pad under package case isolation to any lead: 20 x 10 9 ? (min) metallization mask layout
isl70444seh 22 intersil products are manufactured, assembled and tested utilizing iso9000 quality systems as noted in the quality certifications found at www.intersil.com/en/suppor t/qualandreliability.html intersil products are sold by description only. intersil corporat ion reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is believed to be accurate and reliable. however, no responsi bility is assumed by intersil or its subsid iaries for its use; nor for any infringem ents of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of i ntersil or its subsidiaries. for information regarding intersil corporation and its products, see www.intersil.com fn8411.1 june 14, 2013 for additional products, see www.intersil.com/en/products.html about intersil intersil corporation is a leader in the design and manufacture of high-performance analog, mixed-signal and power management semiconductors. the company's products addr ess some of the largest markets within th e industrial and infr astructure, personal computing and high-end consumer markets. for more information about intersil, visit our website at www.intersil.com . for the most updated datasheet, application notes, related documentatio n and related parts, please see the respective product information page found at www.intersil.com . you may report errors or suggestions fo r improving this datasheet by visiting www.intersil.com/en/support/ask-an-expert.html . reliability reports are also available from our website at http://www.intersil.com/en/support/q ualandreliability.html#reliability table 1. die layout x-y coordinates pad name pad number x (m) y (m) dx (m) dy (m) bond wires per pad out b 2 599.0 -11.5 70 70 1 out c 3 1472.0 -11.5 70 70 1 -in c 4 2071.0 0.0 70 70 1 +in c 12 2071.0 347.5 70 70 1 v - 20 2071.0 1406.5 70 70 1 +in d 21 2071.0 2465.5 70 70 1 -in d 22 2071.0 2813.0 70 70 1 out d 23 1472.0 2824.5 70 70 1 out a 24 599.0 2824.5 70 70 1 -in a 25 0.0 2813.0 70 70 1 +in a 33 0.0 2465.5 70 70 1 v + 41 0.0 1406.5 70 70 1 +in b 42 0.0 347.5 70 70 1 -in b 10.00.070701 note: 8. origin of coordinates is th e centroid of pad 42, ?in-b?. revision history the revision history provided is for informational purposes only and is believed to be accurate, but not warranted. please go t o the web to make sure that you have the latest revision. date revision change june 14, 2013 fn8411.1 changed radiation tole rance high dose rate from 100krad(si) to 300krad(si) on page 1 features and in electrical spec table conditions on pages 7 and 8. added sr spec for v s = 18v to electrical spec table on page 7. removed max limit of 300 for v os offset voltage in v s = 18v, v s = 2.5v and v s = 1.5v spec tables. may 23, 2013 fn8411.0 initial release.
isl70444seh 23 fn8411.1 june 14, 2013 package outline drawing k14.c 14 lead ceramic metal seal flatpack package rev 0, 9/12 side view top view section a-a -d- -c- seating and base plane -h- base metal pin no. 1 id area 0.022 (0.56) 0.015 (0.38) 0.050 (1.27 bsc) 0.005 (0.13) min 0.115 (2.92) 0.085 (2.16) 0.045 (1.14) 0.026 (0.66) 0.260 (6.60) 0.248 (6.30) 0.009 (0.23) 0.004 (0.10) 0.370 (9.40) 0.270 (6.86) 0.03 (0.76) min 0.006 (0.15) 0.004 (0.10) 0.009 (0.23) 0.004 (0.10) 0.019 (0.48) 0.015 (0.38) 0.0015 (0.04) max 0.022 (0.56) 0.015 (0.38) 3 5 2 lead finish 1. adjacent to pin one and shall be located within the shaded area shown. the manufacturer?s identification shall not be used as a pin one identification mark. 2. the maximum limits of lead dimensions (section a-a) shall be measured at the centroid of the fi nished lead surf aces, when solder dip or tin plate lead finish is applied. 3. 4. shall be molded to the bottom of the package to cover the leads. 5. meniscus) of the lead from the body. dimension minimum shall be reduced by 0.0015 inch (0.038mm) maximum when solder dip lead finish is applied. 7. 8. notes: dimensioning and tolerancing per ansi y14.5m - 1982. dimensions: inch (mm). controlling dimension: inch. index area: a notch or a pin one identification mark shall be located measure dimension at all four corners. for bottom-brazed lead packages, no organic or polymeric materials dimension shall be measured at the point of exit (beyond the 0.390 (9.91) 0.376 (9.55) 0.183 (4.65) 0.167 (4.24) 6 bottom metal 6. the bottom of the package is a solderable metal surface. bottom view optional pin 1 index bottom metal 0.005 (0.127) ref. offset from ceramic edge a a 1

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